BSC160N10NS3G Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

Type
OptiMOS^TM3 Power-Transistor
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Halogen-free according to IEC61249-2-21
BSC160N10NS3 G
Product Summary
V_DS
R_DS(on),max
I_D
100 V
16 mW
42 A
PG-TDSON-8
Type
BSC160N10NS3 G
Package
PG-TDSON-8
Marking
160N10NS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
T _A=25 °C,
R _thJA=50 K/W²⁾
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=33 A, R _GS=25 W
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
Unit
42
A
27
8.8
168
50
mJ
±20
V
60
W
-55 ... 150
°C
55/150/56
Rev. 2.4
page 1
2009-10-30