BSC150N03LD Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistors

BSC150N03LD G
OptiMOS™3 Power-Transistors
Features
• Dual N-channel, logic level
• Fast switching MOSFETs for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Superior thermal resistance
Product Summary
V _DS
R _DS(on),max
I_D
30 V
15 mΩ
20 A
PG-TDSON-8
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSC150N03LD G
Package
PG-TDSON-8
Marking
150N03LD
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
Value
Unit
≤10 secs steady state
20
A
V _GS=10 V, T _C=100 °C
20
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V,
T _C=100 °C
V _GS=10 V, T _A=25 °C³⁾
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=20 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
T _A=25 °C³⁾
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1) _{J-STD20 and JESD22}
Rev. 1.4
page 1
20
17
12.4
8
80
10
±20
26
3.6
1.5
-55 ... 150
55/150/56
mJ
V
W
°C
2009-11-04