BSC12DN20NS3G_11 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

Type
OptiMOS^TM3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Low on-resistance R _DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Halogen-free according to IEC61249-2-21
BSC12DN20NS3 G
Product Summary
V_DS
R_DS(on),max
I_D
200 V
125 mΩ
11.3 A
PG-TDSON-8
Type
BSC12DN20NS3 G
Package
PG-TDSON-8
Marking
12DN20NS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
Avalanche energy, single pulse
I_D
I _D,pulse
E _AS
T _C=25 °C
T _C=100 °C
T _C=25 °C
I _D=5.7 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{see figure 3}
Value
11.3
8.0
45
60
10
±20
50
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.2
page 1
2011-05-20