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BSC106N025SG_09 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor | |||
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OptiMOSâ¢2 Power-Transistor
Features
⢠Fast switching MOSFET for SMPS
⢠Optimized technology for notebook DC/DC converters
⢠Qualified according to JEDEC1 for target applications
⢠Logic level / N-channel
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
⢠Superior thermal resistance
⢠Avalanche rated; dv/dt rated
⢠Pb-free lead plating; RoHS compliant
⢠Halogen-free according to IEC61249-2-21
BSC106N025S G
Product Summary
V DS
R DS(on),max
ID
25 V
10.6 mâ¦
30 A
PG-TDSON-8
Type
BSC106N025S G
Package
PG-TDSON-8
Marking
106N025S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=45 K/W2)
Pulsed drain current
Avalanche energy, single pulse
I D,pulse
E AS
T C=25 °C3)
I D=30 A, R GS=25 â¦
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
T A=25 °C,
R thJA=45 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.4
page 1
Value
30
30
13
120
80
6
±20
43
2.8
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
2009-11-03
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