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| BSC0923NDI Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Dual N-Channel OptiMOS™ MOSFET | |||
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Dual N-Channel OptiMOS⢠MOSFET
Features
Product Summary
⢠Dual N-channel OptiMOS⢠MOSFET
⢠Optimized for high performance Buck converter
⢠Logic level (4.5V rated)
VDS
RDS(on),max
VGS=10 V
⢠100% avalanche tested
ID
⢠Qualified according to JEDEC1) for target applications
VGS=4.5 V
⢠Pb-free lead plating; RoHS compliant
⢠Halogen-free according to IEC61249-2-21
VPhase
BSC0923NDI
Q1 Q2
30 30 V
5
2.8 mW
7
3.7
40 40 A
Type
BSC0923NDI
Package
PG-TISON-8
Marking
0923NDI
Maximum ratings, at T j=25 °C, unless otherwise specified 2)
Parameter
Continuous drain current
Pulsed drain current5)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Symbol Conditions
ID
I D,pulse
E AS
V GS
P tot
T C=70 °C, VGS=10V
T A=25 °C, VGS=4.5V3)
T A=70 °C, VGS=4.5V3)
T A=25 °C, VGS=10V4)
T C=70 °C
Q1: I D=20 A,
Q2: I D=20 A,
R GS=25 W
T A=25 °C2)
Value
Unit
Q1
Q2
40
40
A
17
32
14
25
10
15
160
160
9
20
mJ
±20
V
2.5
2.5
W
T A=25 °C, minimum
footprint3)
1.0
1.0
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
-55 ... 150
°C
55/150/56
1) J-STD20 and JESD22
2) One transistor active
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is
vertical in still air.
4) Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active
5) See figure 3 for more detailed information.
Rev.2.0
page 1
2013-07-30
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