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| BSC0910NDI Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Dual N-Channel OptiMOS™ MOSFET | |||
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Dual N-Channel OptiMOS⢠MOSFET
Features
Product Summary
⢠Dual N-channel OptiMOS⢠MOSFET
⢠Optimized for high performance Buck converter
⢠Logic level (4.5V rated)
VDS
RDS(on),max
⢠100% avalanche tested
ID
⢠Qualified according to JEDEC1) for target applications
VGS=10 V
VGS=4.5 V
⢠Pb-free lead plating; RoHS compliant
⢠Halogen-free according to IEC61249-2-21
VPhase
⢠Integrated monolithic Schottky-like diode
BSC0910NDI
Q1 Q2
25 25 V
4.6 1.2 mW
5.9 1.6
40 40 A
Type
BSC0910NDI
Package
PG-TISON-8
Marking
0910NDI
Maximum ratings, at T j=25 °C, unless otherwise specified 2)
Parameter
Symbol Conditions
Continuous drain current
ID
T C=70 °C, V GS=10 V
T A=25 °C, V GS=4.5 V3)
Value
Q1
Q2
40
40
16
31
Unit
A
T A=70 °C,
V GS=4.5 V3)
13
25
Pulsed drain current5)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
T A=25 °C, V GS=10 V4)
11
22
I D,pulse
E AS
V GS
P tot
T C=70 °C
Q1: I D=20 A,
Q2: I D=20 A,
R GS=25 W
T A=25 °C2)
160
160
12
80
mJ
±20
V
2.5
2.5
W
T A=25 °C, minimum
footprint4)
1.0
1.0
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T j, T stg
-55 ... 150
°C
55/150/56
Rev.2.0
page 1
2013-11-27
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