BSC080P03LSG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™-P Power-Transistor

OptiMOS^™-P Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Avalanche rated; RoHS compliant
• Vgs=25V, specially suited for notebook applications
• Halogen-free according to IEC61249-2-21
BSC080P03LS G
Product Summary
V _DS
R _DS(on),max
I_D
-30 V
8 mΩ
-30 A
PG-TDSON-8
Type
Package
Marking Lead free
BSC080P03LS G PG-TDSON-8 080P03LS Yes
Packing
Dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I_D
T _C=25 °C
T _C=70 °C
I _D,pulse
T _A=25 °C¹⁾
T _C=25 °C²⁾
E _AS
I _D=-30 A, R _GS=25 Ω
V _GS
P _tot
T _C=25 °C
T _A=25 °C¹⁾
T _j, T _stg
ESD class
JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
-30
-30
-16
-120
248
±25
89
2.5
-55 ... 150
1C (1kV-2kV)
260 °C
55/150/56
Unit
A
mJ
V
W
°C
Rev. 1.04
page 1
2010-05-04