BSC080N03LSG_13 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-MOSFET

OptiMOS™3 Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel; Logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC080N03LS G
Product Summary
V_DS
R_DS(on),max
I_D
30 V
8 mW
53 A
PG-TDSON-8
Type
Package
Marking
BSC080N03LS G
PG-TDSON-8 080N03LS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
Value
Unit
53
A
33
Pulsed drain current³⁾
Avalanche current, single pulse⁴⁾
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) _{J-STD20 and JESD22}
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V,
T _C=100 °C
V _GS=10 V, T _A=25 °C,
R _thJA=50 K/W²⁾
I _D,pulse
I _AS
E _AS
dv /dt
V _GS
T _C=25 °C
T _C=25 °C
I _D=35 A, R _GS=25 W
I _D=50 A, V _DS=24 V,
di /dt =200 A/µs,
T _j,max=150 °C
43
27
14
212
45
15
mJ
6
kV/µs
±20
V
Rev. 2.1
page 1
2013-05-17