BSC072N03LDG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistors

OptiMOS™3 Power-Transistors
Features
• Dual N-channel, logic level
• Fast switching MOSFETs for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
BSC072N03LD G
Product Summary
V _DS
R _DS(on),max
I_D
30 V
7.2 mΩ
20 A
PG-TDSON-8
• Superior thermal resistance
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC072N03LD G
PG-TDSON-8 072N03LD
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
Value
Unit
≤10 secs steady state
20
A
V _GS=10 V, T _C=100 °C
20
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V,
T _C=100 °C
V _GS=10 V, T _A=25 °C³⁾
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=20 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
Operating and storage temperature
P _tot
T _C=25 °C
T _A=25 °C³⁾
T _j, T _stg
IEC climatic category; DIN IEC 68-1
1) _{J-STD20 and JESD22}
20
20
17.9
11.5
80
90
mJ
±20
V
57
W
3.6
1.5
-55 ... 150
°C
55/150/56
Rev. 1.4
page 1
2009-10-23