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BSC072N03LD Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistors | |||
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OptiMOSâ¢3 Power-Transistors
Features
⢠Dual N-channel, logic level
⢠Fast switching MOSFETs for SMPS
⢠Optimized technology for DC/DC converters
⢠Qualified according to JEDEC1) for target applications
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
BSC072N03LD G
Product Summary
V DS
R DS(on),max
ID
30 V
7.2 mâ¦
20 A
PG-TDSON-8
⢠Superior thermal resistance
⢠100% avalanche tested
⢠Pb-free plating; RoHS compliant
⢠Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC072N03LD G
PG-TDSON-8 072N03LD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
V GS=10 V, T C=25 °C
Value
Unit
â¤10 secs steady state
20
A
V GS=10 V, T C=100 °C
20
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
V GS=10 V, T A=25 °C3)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=20 A, R GS=25 â¦
Gate source voltage
V GS
Power dissipation
Operating and storage temperature
P tot
T C=25 °C
T A=25 °C3)
T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
20
20
17.9
11.5
80
90
mJ
±20
V
57
W
3.6
1.5
-55 ... 150
°C
55/150/56
Rev. 1.4
page 1
2009-10-23
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