BSC070N10NS3G_11 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

OptiMOS^TM3 Power-Transistor
Features
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Halogen-free according to IEC61249-2-21
BSC070N10NS3 G
Product Summary
V_DS
R_DS(on),max
I_D
100 V
7 mW
90 A
PG-TDSON-8
Type
BSC070N10NS3 G
Package
PG-TDSON-8
Marking
070N10NS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=50 A, R _GS=25 W
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2)_{See figure 3}
Value
Unit
90
A
58
360
160
mJ
±20
V
114
W
-55 ... 150
°C
55/150/56
Rev. 2.1
page 1
2011-03-11