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BSC060N10NS3G Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor | |||
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OptiMOSTM3 Power-Transistor
Features
⢠Very low gate charge for high frequency applications
⢠Optimized for dc-dc conversion
⢠N-channel, normal level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
⢠150 °C operating temperature
⢠Pb-free lead plating; RoHS compliant
⢠Qualified according to JEDEC1) for target application
⢠Halogen-free according to IEC61249-2-21
BSC060N10NS3 G
Product Summary
V DS
R DS(on),max
ID
100 V
6 mâ¦
90 A
PG-TDSON-8
Type
BSC060N10NS3 G
Package
PG-TDSON-8
Marking
060N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=50 K/W2)
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
Gate source voltage
E AS
V GS
I D=50 A, R GS=25 â¦
Power dissipation
Operating and storage temperature
P tot
T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
90
A
66
14.9
360
230
mJ
±20
V
125
W
-55 ... 150
°C
55/150/56
Rev. 2.4
page 1
2009-10-21
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