BSC036NE7NS3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

BSC036NE7NS3 G
OptiMOS^TM3 Power-Transistor
Features
• Optimized technology for synchronous rectification
• Ideal for high frequency switching and DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
Product Summary
V_DS
R_DS(on),max
I_D
75 V
3.6 mW
100 A
Type
BSC036NE7NS3 G
Package
Marking
PG-TDSON-8
036NE7NS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
100
A
100
V _GS=10 V, T _A=25 °C,
R _thJA=50 K/W²⁾
20
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
400
Avalanche energy, single pulse
Gate source voltage
E _AS
V _GS
I _D=50 A, R _GS=25 W
260
mJ
±20
V
1) _{J-STD20 and JESD22}
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Rev. 2.0
page 1
2011-09-29