BSC035N04LSG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

OptiMOS^®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel; Logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC035N04LS G
Product Summary
V _DS
R _DS(on),max
I_D
40 V
3.5 mΩ
100 A
PG-TDSON-8
Type
BSC035N04LS G
Package
PG-TDSON-8
Marking
035N04LS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V,
T _C=100 °C
Pulsed drain current³⁾
Avalanche current, single pulse⁴⁾
Avalanche energy, single pulse
Gate source voltage
1) _{J-STD20 and JESD22}
V _GS=10 V, T _A=25 °C,
R _thJA=50 K/W²⁾
I _D,pulse
I _AS
E _AS
V _GS
T _C=25 °C
T _C=25 °C
I _D=50 A, R _GS=25 Ω
Value
Unit
100
A
71
92
58
21
400
50
65
mJ
±20
V
Rev. 1.04
page 1
2009-10-20