BSC032N03S_09 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

BSC032N03S G
OptiMOS™2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC¹ for target applications
• Logic level / N-channel
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Superior thermal resistance
• Avalanche rated; dv/dt rated
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V _DS
R _DS(on),max
I_D
30 V
3.2 mΩ
100 A
PG-TDSON-8
Type
BSC032N03S G
Package
PG-TDSON-8
Marking
32N03S
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
I _D,pulse
E _AS
dv /dt
T _A=25 °C,
R _thJA=45 K/W²⁾
T _C=25 °C³⁾
I _D=50 A, R _GS=25 Ω
I _D=50 A, V _DS=24 V,
di /dt =200 A/µs,
T _j,max=150 °C
Gate source voltage
Power dissipation
V _GS
P _tot
T _C=25 °C
T _A=25 °C,
R _thJA=45 K/W²⁾
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
100
77
23
200
550
6
±20
78
2.8
-55 ... 150
55/150/56
A
mJ
kV/µs
V
W
°C
Rev. 1.64
page 1
2009-10-22