BSC030P03NS3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS P3 Power-Transistor

OptiMOS^TM P3 Power-Transistor
Features
• single P-Channel in SuperSO8
• Qualified according JEDEC¹⁾ for target applications
• V _GS=25 V, specially suited for notebook applications
• Pb-free; RoHS compliant
• ESD > 4 kV
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
BSC030P03NS3 G
Product Summary
V _DS
R _DS(on),max
I_D
-30 V
3.0 mΩ
-100 A
PG-TDSON-8
Type
Package
Marking
BSC030P03NS3 G PG-TDSON-8 030P3NS
Lead free
Yes
Halogen free
Yes
Packing
dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _C=25 °C
T _C=70 °C
T _A=25 °C
T _C=25 °C³⁾
Avalanche energy, single pulse
E _AS
I _D=-100 A, R _GS=25 Ω
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
V _GS
P _tot
T _C =25 °C
T _A=25 °C²⁾
T _j, T _stg
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
1) _{J-STD20 and JESD22}
-100
-100
-25.4
-200
345
±25
125
2.5
-55 ... 150
class 3 (> 4KV)
260 °C
55/150/56
Rev. 2.1
page 1
Unit
A
mJ
V
W
°C
2009-11-16