BSC029N025SG_09 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

OptiMOS™2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC¹ for target applications
• Logic level / N-channel
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Superior thermal resistance
• Avalanche rated; dv/dt rated
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC029N025S G
Product Summary
V _DS
R _DS(on),max
I_D
25 V
2.9 mΩ
100 A
PG-TDSON-8
Type
Package
Marking
BSC029N025S
PG-TDSON-8 29N025S
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
T _C=25 °C
T _C=100 °C
T _A=25 °C,
R _thJA=45 K/W²⁾
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
I _D,pulse
E _AS
dv /dt
T _C=25 °C³⁾
I _D=50 A, R _GS=25 Ω
I _D=50 A, V _DS=24 V,
di /dt =200 A/µs,
T _j,max=150 °C
Gate source voltage
Power dissipation
V _GS
P _tot
T _C=25 °C
T _A=25 °C,
R _thJA=45 K/W²⁾
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
100
81
24
200
680
6
±20
78
2.8
-55 ... 150
55/150/56
A
mJ
kV/µs
V
W
°C
Rev. 1.4
page 1
2009-10-22