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| BSC018NE2LS_13 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSTM Power-MOSFET | |||
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OptiMOSTM Power-MOSFET
Features
⢠Optimized for high performance Buck converter
⢠Very low on-resistance R DS(on) @ V GS=4.5 V
⢠100% avalanche tested
⢠Superior thermal resistance
⢠N-channel
⢠Qualified according to JEDEC1) for target applications
⢠Pb-free lead plating; RoHS compliant
⢠Halogen-free according to IEC61249-2-21
BSC018NE2LS
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
25 V
1.8 mW
100 A
21 nC
39 nC
PG-TDSON-8
Type
BSC018NE2LS
Package
PG-TDSON-8
Marking
018NE2LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
I D,pulse
I AS
E AS
V GS
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
T C=25 °C
T C=25 °C
I D=50 A, R GS=25 W
Value
Unit
100
A
97
100
86
29
400
50
80
mJ
±20
V
Rev. 2.2
page 1
2013-02-12
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