BSC016N06NS_13 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSTM Power-MOSFET

BSC016N06NS
OptiMOS^TM Power-MOSFET
Features
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V_DS
R_DS(on),max
I_D
Q_OSS
Q_G(0V..10V)
60
V
1.6
mW
100 A
81
nC
71
nC
PG-TDSON-8 FL
enlarged source interconnection
• Higher solder joint reliability due to enlarged source interconnection
Type
Package
Marking
BSC016N06NS
PG-TDSON-8 FL
016N06NS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
100
A
V _GS=10 V, T _C=100 °C
100
V _GS=10 V, T _A=25 °C,
R _thJA=50 K/W²⁾
30
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
400
Avalanche energy, single pulse⁴⁾
E _AS
I _D=50 A, R _GS=25 W
380
mJ
Gate source voltage
V _GS
±20
V
1) _{J-STD20 and JESD22}
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Rev. 2.1
page 1
2013-01-29