BSC010NE2LSI_16 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – OptiMOSTM Power-MOSFET, 25 V

BSC010NE2LSI
MOSFET
OptiMOS^TMPower-MOSFET,25V
Features
•OptimizedforhighperformanceBuckconverter
•MonolithicintegratedSchottkylikediode
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•N-channel
•QualifiedaccordingtoJEDEC¹⁾fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
25
V
RDS(on),max
1.05
mΩ
ID
100
A
QOSS
38
nC
QG(0V..10V)
59
nC
SuperSO8
8 _{7 65}
56 ₇₈
1
23
4
4321
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
BSC010NE2LSI
Package
PG-TDSON-8
Marking
010NE2LI
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
Rev.2.4,2016-01-29