BSB104N08NP3G Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS™3 Power-MOSFET

OptiMOS™3 Power-MOSFET
Features
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• Low profile (<0.7mm)
• Dual sided cooling
• Low parasitic inductance
• N-channel, normal level
BSB104N08NP3 G
Product Summary
V_DS
R_DS(on),max
I_D
80 V
10.4 mW
50 A
CanPAK^TM M
MG-WDSON-2
Type
BSB104N08NP3 G
Package
MG-WDSON-2
Outline
MP
Marking
0308
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
50
A
V _GS=10 V, T _C=100 °C
32
V _GS=10 V, T _A=25 °C,
R _thJA=45 K/W¹⁾
13
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
200
Avalanche energy, single pulse³⁾
E _AS
I _D=30 A, R _GS=25 W
110
mJ
Gate source voltage
V _GS
±20
V
1) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
Rev. 2.1
page 1
2013-11-28