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BSB044N08NN3G_11 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS™3 Power-MOSFET | |||
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BSB044N08NN3 G
OptiMOSâ¢3 Power-MOSFET
Features
⢠Optimized technology for DC/DC converters
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Superior thermal resistance
⢠Dual sided cooling
⢠low parasitic inductance
Product Summary
VDS
RDS(on),max
ID
80 V
4.4 mW
90 A
CanPAKTM M
MG-WDSON-2
⢠Low profile (<0.7mm)
⢠N-channel, normal level
⢠100% avalanche tested
⢠Pb-free plating; RoHS compliant
⢠Qualified according to JEDEC1) for target applications
⢠Compatible with DirectFET® package MN footprint and outline2)
Type
BSB044N08NN3 G
Package
MG-WDSON-2
Outline
MN
Marking
0208
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
ID
V GS=10 V, T C=25 °C
90
V GS=10 V, T C=100 °C
68
V GS=10 V, T A=25 °C,
R thJA=58 K/W2)
18
Pulsed drain current3)
I D,pulse T C=25 °C
360
Avalanche energy, single pulse
E AS
I D=30 A, R GS=25 W
660
Gate source voltage
V GS
±20
1) J-STD20 and JESD22
2) DirectFET® is a trademark of International Rectfier Corporation
BSB028N06NN3 G uses DirectFET® technology licensed from International Rectifier Corporation
Unit
A
mJ
V
Rev. 2.0
page 1
2011-07-18
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