BSB028N06NN3 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS™3 Power-MOSFET

BSB028N06NN3 G
OptiMOS™3 Power-MOSFET
Features
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• Superior thermal resistance
• Dual sided cooling
• low parasitic inductance
Product Summary
V_DS
R_DS(on),max
I_D
60 V
2.8 mW
90 A
CanPAK^TM M
MG-WDSON-2
• Low profile (<0.7mm)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Compatible with DirectFET® package MN footprint and outline²⁾
Type
BSB028N06NN3 G
Package
MG-WDSON-2
Outline
MN
Marking
0106
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
90
V _GS=10 V, T _C=100 °C
85
V _GS=10 V, T _A=25 °C,
R _thJA=58 K/W²⁾
22
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
360
Avalanche energy, single pulse
E _AS
I _D=30 A, R _GS=25 W
590
Gate source voltage
V _GS
±20
1) _{J-STD20 and JESD22}
2) _{DirectFET® is a trademark of International Rectfier Corporation}
BSB028N06NN3 G uses DirectFET® technology licensed from International Rectifier Corporation
Unit
A
mJ
V
Rev. 2.0
page 1
2014-04-17