BSB019N03LXG Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS2 Power-MOSFET

BSB019N03LX G
OptiMOS^TM2 Power-MOSFET
Features
• Pb-free plating; RoHS compliant
• Dual sided cooling
• Low profile (<0.7 mm)
Product Summary
V _DS
R _DS(on),max
I_D
30 V
1.9 mΩ
174 A
• Avalanche rated
• Qualified for consumer level application
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
MG-WDSON-2
• Optimized for high switching frequency DC/DC converter
• Low parasitic inductance
• Compatible with DirectFET® package MX footprint and outline ¹⁾
Type
BSB019N03LX G ²⁾
Package
MG-WDSON-2
Outline
MX
Marking
1003
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
174
A
110
V _GS=10 V, T _A=25 °C,
R _thJA=45 K/W²⁾
31
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
400
Avalanche current, single pulse⁴⁾
I _AS
T _C=25 °C
50
Avalanche energy, single pulse
E _AS
I _D=50 A, R _GS=25 Ω
290
mJ
Gate source voltage
V _GS
±20
V
1) _CanPAKTM _{uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered}
trademark of International Rectifier Corporation.
Rev. 2.0
page 1
2009-05-11