BSB015N04NX3G Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS3 Power-MOSFET

BSB015N04NX3 G
OptiMOS^TM3 Power-MOSFET
Features
• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R _DS(on)
• Excellent gate charge x R _DS(on) product (FOM)
Product Summary
V _DS
R _DS(on),max
I_D
40 V
1.5 mΩ
180 A
• Low parasitic inductance
• Low profile (<0.7 mm)
• 100% avalanche tested
MG-WDSON-2
• 100% Rg Tested
• Double-sided cooling
• Pb-free plating; RoHS compliant
• Compatible with DirectFET® package MX footprint and outline ¹⁾
• Qualified according to JEDEC²⁾ for target applications
Type
BSB015N04NX3 G
Package
MG-WDSON-2
Outline
MX
Marking
0204
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
180
A
124
Pulsed drain current³⁾
Avalanche current, single pulse⁴⁾
Avalanche energy, single pulse
Gate source voltage
I _D,pulse
I _AS
E _AS
V _GS
V _GS=10 V, T _A=25 °C,
R _thJA=45 K/W²⁾
T _C=25 °C
T _C=25 °C
I _D=40 A, R _GS=25 Ω
35
400
40
290
mJ
±20
V
1) _CanPAKTM _{uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered}
trademark of International Rectifier Corporation.
2) _{J-STD20 and JESD22}
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Rev. 2.0
page 1
2009-05-11