BSB013NE2LXI_13 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOSTM Power-MOSFET

BSB013NE2LXI
OptiMOS^TM Power-MOSFET
Features
• Optimized SyncFET for high performance Buck converter
• Integrated monolithic Schottky like diode
• Low profile (<0.7 mm)
• 100% avalanche tested
• 100% R _G Tested
Product Summary
V_DS
R_DS(on),max
I_D
Q_oss
Q_g(0V..10V)
25 V
1.3 mW
163 A
39 nC
62 nC
• Double-sided cooling
• Compatible with DirectFET® package MX footprint and outline ¹⁾
• Qualified according to JEDEC²⁾ for target applications
CanPAK^TM M
MG-WDSON-2
• Pb-free lead plating; RoHS compliant
Type
BSB013NE2LXI
Package
MG-WDSON-2
Outline
MX
Marking
02E2
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
163
A
V _GS=10 V, T _C=100 °C
103
V _GS=10 V, T _A=25 °C,
R _thJA=45 K/W³⁾
36
Pulsed drain current⁴⁾
I _D,pulse T _C=25 °C
400
Avalanche current, single pulse⁵⁾
I _AS
T _C=25 °C
40
Avalanche energy, single pulse
Gate source voltage
E _AS
V _GS
I _D=40 A, R _GS=25 W
130
mJ
±20
V
1) _CanPAKTM _{uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a}
registered trademark of International Rectifier Corporation.
2) _{J-STD20 and JESD22}
3) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
4) _{See figure 3 for more detailed information}
5) _{See figure 13 for more detailed information}
Rev. 2.4
page 1
2013-02-12