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BSB012N03LX3G Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOS3 Power-MOSFET | |||
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BSB012N03LX3 G
OptiMOSTM3 Power-MOSFET
Features
⢠Optimized for high switching frequency DC/DC converter
⢠Very low on-resistance R DS(on)
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Low parasitic inductance
Product Summary
V DS
R DS(on),max
ID
30 V
1.2 mâ¦
180 A
MG-WDSON-2
⢠Low profile (<0.7 mm)
⢠100% avalanche tested
⢠100% Rg Tested
⢠Double-sided cooling
⢠Pb-free plating; RoHS compliant
⢠Compatible with DirectFET® package MX footprint and outline 1)
⢠Qualified according to JEDEC2) for target applications
Type
BSB012N03LX3 G
Package
MG-WDSON-2
Outline
MX
Marking
0103
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Value
Unit
180
A
139
V GS=10 V, T A=25 °C,
R thJA=45 K/W
39
Pulsed drain current3)
I D,pulse T C=25 °C
400
Avalanche current, single pulse4)
I AS
T C=25 °C
40
Avalanche energy, single pulse
E AS
I D=40 A, R GS=25 â¦
290
mJ
Gate source voltage
V GS
±20
V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2) J-STD20 and JESD22
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.1
page 1
2009-11-17
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