BGX50A_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Silicon Switching Diode Array

Silicon Switching Diode Array
• Bridge configuration
• High-speed switching diode chip
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BGX50A...
BGX50A
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Type
BGX50A
Package
SOT143
Configuration
bridge
Maximum Ratings at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
Total power dissipation
T_S ≤ 74°C
Junction temperature
Storage temperature
V_R
V_RM
I_F
I_FSM
P_tot
T_j
T_stg
Thermal Resistance
Parameter
Junction - soldering point²⁾
BGX50A
Symbol
R_thJS
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
50
70
140
-
210
150
-65 ... 150
Value
360
Marking
U1s
Unit
V
mA
mW
°C
Unit
K/W
1
2007-03-27