BGX400 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – Silicon Switching Diodes

BGX400
Silicon Switching Diodes
3

Switching applications

High breakdown voltage

Halfbridge rectifier
2
1
1 _VPS05161
3
2
EHA07365
Type
BGX400
Marking
GXs
Pin Configuration
1=C1/A2 2=C2
3=A1
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 ms
Total power dissipation, T_S = 71 °C
Junction temperature
Storage temperature
V_R
V_RM
I_F
I_FS
P_tot
T_j
T_stg
400
400
250
2
250
150
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS

315
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Unit
V
mA
A
mW
°C
K/W
1
Aug-20-2001