BGS12PL6BOARD Datasheet, PDF (1/3 Pages) Infineon Technologies AG – BGS12PL6 general purpose high RF power SPDT switch is designed

BGS12PL6
BOARD
Description:
BGS12PL6 general purpose
high RF power SPDT switch is
designed to cover a broad
range of high RF power
applications from 30 MHz to 4
GHz, mainly in the transmit
path of GSM, WCDMA and LTE
mobile phones. The symmetric design of its single pole double throw
configuration offers high design flexibility. This single supply device integrates
on-chip CMOS logic driven by a simple, single-pin CMOS / TTL compatible
control input signal. The 0.1 dB compression point exceeds the switch’s
maximum input power level of 35 dBm, resulting in high linear performance at
all signal levels. The RF switch has a very low insertion loss of 0.36 dB in the 1
GHz, 0.46 dB in the 2 GHz and 0.6 dB in the 3 GHz range.
Product: BGS12PL6
Summary of Features:
• 2 high-linearity TRx paths with power handling capability of up to 35
dBm
• All ports fully symmetrical
• Low insertion loss
• Low harmonic generation
• High port-to-port isolation
• 0.03 to 4 GHz coverage
• High ESD robustness
• On-chip control logic
• Very small leadless and halogen free package TSLP-6-4
(0.7x1.1mm2) with super low height of 0.31 mm