BGM7LLHM4L12 Datasheet, PDF (1/2 Pages) Infineon Technologies AG – Infineon’s New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates

Product Brief
Infineon’s New LTE Low Noise Amplifiers
Almost Double Smartphone Data Rates
Improving the user experience by improving smartphone data rates by up to 96% is
the boast of Infineon for its LTE LNA (low noise amplifiers) and quad LNA banks.
The BGA7x1N6 and BGM7xxxx4L12 families provide a low noise figure, the exact gain
and high linearity needed to help smartphone designers overcome the challenges
of LTE or 4G which allows for data rates up to 300Mbit/s – compared to 56Mbit/s in
the latest UMTS (3G) release. However, the increasing complexity of the RF front end
results in more RF components (e.g. switches, diplexers and dividers) and leads to
increasing losses over the whole system and deterioration of the signal-to-noise ratio
(SNR). The distance between antenna and the RF transceiver leads to additional line
losses that also negatively affect SNR and therefore the data rate.
The LNAs and LNA banks are based on the company’s Silicon Germanium Carbon
(SiGe:C) chip technology and include built-in ESD protection of 2kV HBM.
They are located in the diversity and main antenna path of the phone and push smart-
phone data rates’ limits 96% higher than in solutions without LNAs. High linearity
assures optimal signal reception even in conditions of poorly isolated antenna and
long line losses between antenna and transceiver. The typical sensitivity improvement
of 3.4dB compared to systems without LNAs is achieved in devices with a package size
70% smaller (1.1 x 0.7mm²) than previously available LNAs and 61% smaller
(1.9 x 1.1mm²) than previously available LNA banks.
The products are also self-shielded to prevent parasitic interference and require only
one external component per LNA.
There are three LTE LNAs and seven quad LNA bank families to address the required
band configurations for different world regions, each letter in the series denotes a
different frequency band: L for the low, 0.7GHz to 1GHz band; M for mid, 1.7GHz to
2.2GHz band; and H for high, 2.3GHz to 2.7GHz band.
They are shipped in RoHS-compliant TSNP-6-2 or TSLP 12-4 plastic packages.
www.infineon.com/rfmmic
Key Features
„„ High linearity
„„ Best-in-class noise figure
„„ Low current consumption
„„ Supply voltage: 1.5V to 3.3V
„„ Ultra small
–– Single LNAs:
TSNP-6-2 leadless package
(footprint: 1.1 x 0.7mm²)
–– Quad LNA banks:
TSLP-12-4 leadless package
(footprint: 1.1 x 1.9mm²)
„„ B7HF Silicon Germanium Carbon
(SiGe:C) technology
„„ RF output internally matched
to 50Ω
„„ Low external component count
„„ 2kV HBM ESD protection
„„ Pb-free (RoHS compliant) package
Applications
„„ Smartphones
„„ Tablets
„„ Datacards
„„ M2M communication