BGA619 Datasheet, PDF (1/17 Pages) Infineon Technologies AG – The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications

Application Note No. 081
Discrete Semiconductors
The BGA619 Silicon-Germanium High IP3 Low Noise
Amplifier in PCS Receiver Applications
Features
• Easy-to-use LNA MMIC in 70 GHz f_t SiGe technology
• Tiny „Green“ P-TSLP-7-1 package (no Lead or Halogen
compounds)
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• Low external component count
• Integrated output DC blocking capacitor, integrated RF
choke on internal bias network
• Three gain steps
• Power off function
1 ₂₃
• High IP3 in all modes
P-TSLP-7-1
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4
7
Applications
• Low Noise Amplifier for 1900 MHz PCS wireless frontends (CDMA 2000).
Introduction
The BGA619 is an easy-to-use, low-cost Low Noise Amplifier (LNA) MMIC designed
for use in today’s PCS systems which require excellent linearity in each of several gain
step modes. Based on Infineon’s cost-effective 70 GHz f_T Silicon-Germanium (SiGe)
B7HF bipolar process technology, the BGA619 offers a 1.5 dB noise figure and 14.9 dB
of gain at 1.96 GHz with a current consumption of 6.5 mA in high gain mode. BGA619
offers impressive IIP3 performance of 7 dBm in High Gain mode, particularly for a three-
gain step, low-cost, integrated MMIC.
The new LNA incorporates a 50 Ω pre-matched output with an integrated output DC
blocking capacitor. The input is pre-matched, requiring an external DC blocking
capacitor. An integrated, on-chip inductor eliminates the need for an external RF choke
on the voltage supply pin. The operating mode of the device is determined by the voltage
at the GS-pin. An integrated on/off feature provides for low power consumption and
increased stand by time for PCS cellular handsets.
AN081
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2004-04-19