BGA427_07 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – Si-MMIC-Amplifier in SIEGET 25-Technologie

Si-MMIC-Amplifier in SIEGET^ 25-Technologie
BGA427
• Cascadable 50 Ω-gain block
• Unconditionally stable
3
• Gain |S₂₁|² = 18.5 dB at 1.8 GHz (Appl.1)
4
gain |S₂₁|² = 22 dB at 1.8 GHz (Appl.2)
IP_3out = +7 dBm at 1.8 GHz (V_D=3V, I_D=9.4mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
• Typical device voltage V_D = 2 V to 5 V
• Reverse isolation > 35 dB (Appl.2)
• Pb-free (RoHS compliant) package¹⁾
Circuit Diagram
1
IN
2
1
3
+V
4
OUT
2
GND
EHA07378
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BGA427
Marking
BMs
1, IN
Pin Configuration
Package
2, GND 3, +V 4, Out _SOT343
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
T_S = 120 °C
RF input power
Junction temperature
Ambient temperature range
Storage temperature range
Symbol
I_D
V_D,+V
P_tot
P_RFin
T_j
T_A
T_stg
Value
25
6
150
-10
150
-65 ... 150
-65 ... 150
Unit
mA
V
mW
dBm
°C
Thermal Resistance
Junction - soldering point²⁾
R_thJS
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
≤ 295
K/W
1
2007-07-12