BGA427 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable)

BGA427
Si-MMIC-Amplifier in SIEGET 25-Technologie

Cascadable 50 -gain block

Unconditionally stable

Gain |S₂₁|² = 18.5 dB at 1.8 GHz (Appl.1)
gain |S₂₁|² = 22 dB at 1.8 GHz (Appl.2)
IP_3out = +7 dBm at 1.8 GHz (V_D=3V, I_D=9.4mA)

Noise figure NF = 2.2 dB at 1.8 GHz

Typical device voltage V_D = 2 V to 5 V

Reverse isolation  35 dB (Appl.2)
3
4
2
1
VPS05605
3
+V
Circuit Diagram
4
OUT
1
IN
2
GND
EHA07378
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BGA427
Marking
BMs
1, IN
Pin Configuration
Package
2, GND 3, +V 4, Out _SOT343
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
T_S = 120 °C
RF input power
Junction temperature
Ambient temperature range
Storage temperature range
Symbol
I_D
V_D,+V
P_tot
P_RFin
T_j
T_A
T_stg
Value
25
6
150
-10
150
-65 ... 150
-65 ... 150
Unit
mA
V
mW
dBm
°C
Thermal Resistance
Junction - soldering point¹⁾
R_thJS
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}

295
K/W
1
Aug-02-2001