BGA420E6327 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Si-MMIC-Amplifier in SIEGET 25-Technologie

Si-MMIC-Amplifier ^{in SIEGET 25-Technologie}
BGA420
• Cascadable 50 Ω-gain block
• Unconditionally stable
• Gain |S₂₁|² = 13 dB at 1.8 GHz
IP_3out = +13 dBm at 1.8 GHz
(V_D = 3 V, I_D = typ. 6.7 mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
• Reverse isolation > 28 dB and
return loss IN / OUT > 12 dB at 1.8 GHz
• Pb-free (RoHS compliant) package
3
4
2
1
V_D
4
3
OUT
Circuit Diagram
1
IN
2
GND
EHA07385
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BGA420
Marking
BLs
1, IN
Pin Configuration
Package
2, GND 3, OUT 4, VD _SOT343
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
T_S = 110 °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Symbol
I_D
V_D
P_tot
P_RFin
T_j
T_A
T_stg
Value
15
6
90
0
150
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
≤ 410
Unit
mA
V
mW
dBm
°C
K/W
1
2011-07-26