BGA420 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 Ω-gain block Unconditionally stable)

BGA420
Si-MMIC-Amplifier in SIEGET 25-Technologie

Cascadable 50 -gain block

Unconditionally stable

Gain |S₂₁|² = 13 dB at 1.8 GHz
IP_3out = +13 dBm at 1.8 GHz
(V_D = 3 V, I_D = typ. 6.7 mA)

Noise figure NF = 2.3 dB at 1.8 GHz

Reverse isolation > 28 dB and
return loss IN / OUT > 12 dB at 1.8 GHz
3
4
2
1
VPS05605
V_D
4
Circuit Diagram
3
OUT
1
IN
2
GND
EHA07385
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BGA420
BLs
1, IN 2, GND 3, OUT 4, VD _SOT343
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
T_S = 110 °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Symbol
I_D
V_D
P_tot
P_RFin
T_j
T_A
T_stg
Value
15
6
90
0
150
-65 ... 150
-65 ... 150
Unit
mA
V
mW
dBm
°C
Thermal Resistance
Junction - soldering point¹⁾
R_thJS
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}

410
K/W
1
Jan-29-2002