BG5412K Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Dual N-Channel MOSFET Tetrode

Dual N-Channel MOSFET Tetrode
• Designed for input stages of 2 band tuners
• Two AGC amplifiers in one single package,
with on-chip internal switch
• Only one switching line to control both FETs
• Integrated gate protection diodes
• Ultra low noise figure
• Excellent cross modulation at gain reduction
• Integrated ESD gate protection diodes
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Detailed functional diagram on page 5
BG5412K
4
5
6
3
2
1
BG5412K
6
5
4
A
B
1
2
3
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BG5412K
Package
Pin Configuration
SOT363 1=G1* 2=G2 3=G1** 4=D** 5=S
6=D*
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
Marking
K2s
1
2009-10-01