BG5130R Datasheet, PDF (1/10 Pages) Infineon Technologies AG – DUAL - N-Channel MOSFET Tetrode

BG5130R
DUAL - N-Channel MOSFET Tetrode
• Low noise gain controlled input
stages of UHF-and VHF - tuners
with 3V up to 5V supply voltage
• Integrated gate protection diodes
• Low noise figure
• High gain, high forward transadmittance
• Improved cross modulation at gain reduction
• Biasing network partially integrated
BG5130R
6
5
4
B
A
1
2
3
4
5
6
3
2
1
AGC
G2
RF
G1
Input _RG1
VGG
GND
Drain
RF Output
+ DC
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BG5130R
Package
Pin Configuration
Marking
SOT363 1=G1* 2=S 3=D* 4=D** 5=G2 6=G1** KYs
* For amp. A; ** for amp. B
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
T_S ≤ 78 °C
Storage temperature
Channel temperature
Symbol
V_DS
I_D
±I_G1/2SM
±V_G1/G2S
P_tot
T_stg
T_ch
Value
8
25
1
6
200
-55 ... 150
150
Unit
V
mA
V
mW
°C
1
2006-04-13