BG5120K Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Dual N-Channel MOSFET Tetrode

Dual N-Channel MOSFET Tetrode
• Low noise gain controlled input stages for UHF
and VHF -tuners e. g. (NTSC, PAL)
• Two AGC amplifiers in one single package
• Integrated gate protection diodes
• Low noise figure, high AGC-range
• Improved cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BG5120K
4
5
6
3
2
1
BG5120K
6
5
4
A
B
1
2
3
AGC
G2
RF
G1
Input _RG1
VGG
GND
Drain
RF Output
+ DC
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BG5120K
Package
Pin Configuration
SOT363 1=G1* 2=G2 3=G1** 4=D** 5=S
6=D*
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
Marking
K1
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Symbol
V_DS
I_D
±I_G1/2SM
±V_G1/G2S
P_tot
T_stg
T_ch
1
Value
Unit
8
V
20
mA
1
6
V
200
mW
-55 ... 150
°C
150
2009-10-01