BG3230 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – DUAL N-Channel MOSFET Tetrode

BG3230_BG3230R
DUAL N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF-
and VHF-tuners with 5V supply voltage
• Two AGC amplifiers in one single package
• Integrated stabilized bias network
• Integrated gate protection diodes
• High gain, low noise figure
• Improved cross modulation at gain reduction
• High AGC-range
4
5
6
3
2
1
VPS05604
BG3230
6
5
4
B
A
1
2
3
BG3230R
6
5
4
A
B
1
2
3
AGC
G2
HF
G1
Input
Drain
HF Output
+ DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BG3230
BG3230R
Package
SOT363
SOT363
1=G1
1=G1
Pin Configuration
2=G2 3=D 4=D 5=S
2=S 3=D 4=D 5=G2
6=G1
6=G1
Marking
KBs
KIs
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
V_DS
I_D
±I_G1/2SM
±V_G1/G2S
P_tot
T_stg
T_ch
Thermal Resistance
Parameter
Symbol
Channel - soldering point¹⁾
R_thchs
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Value
8
25
1
6
160
-55 ... 150
150
Value
≤ 280
Unit
V
mA
V
mW
°C
Unit
K/W
1
Feb-27-2004