BG3123 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – DUAL N-Channel MOSFET Tetrode

BG3123...
DUAL N-Channel MOSFET Tetrode
• Two gain controlled input stages for UHF
and VHF -tuners e.g. (NTSC, PAL)
• Optimized for UHF (amp. B) and VHF (amp. A)
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction
4
5
6
3
2
1
VPS05604
BG3123
6
5
4
B
A
1
2
3
BG3123R
6
5
4
B
A
1
2
3
AGC
G2
HF
G1
Input
R_G1
V_GG
Drain
HF Output
+ DC
GND
EHA07461
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BG3123
BG3123R***
Package
SOT363
SOT363
* For amp. A; ** for amp. B
Pin Configuration
1=G1* 2=G2 3=D* 4=D** 5=S
1=G1** 2=S 3=D** 4=D* 5=G2
Marking
6=G1** KOs
6=G1* KRs
*** Target Data
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
amp. A
amp. B
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Symbol
V_DS
I_D
±I_G1/2SM
±V_G1/G2S
P_tot
T_stg
T_ch
Value
8
25
20
1
6
200
-55 ... 150
150
Unit
V
mA
V
mW
°C
1
Feb-27-2004