BFY640 Datasheet, PDF (1/3 Pages) Infineon Technologies AG – HiRel NPN Silicon Germanium RF Transistor

HiRel NPN Silicon Germanium RF Transistor
4
 HiRel Discrete and Microwave Semiconductor
 High gain low noise RF transistor
 High maximum stable gain: G_ms 24dB at 1.8 GHz
 Noise figure F = 0.8 dB at 1.8 GHz
1
Noise figure F = 1.1 dB at 6 GHz
 Hermetically sealed microwave package
BFY640
3
2
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BFY640B
Marking
-
Pin Configuration
1
2
3
C
E
B
Package
4
E Micro-X
Maximum Ratings
Parameter
Collector-emitter voltage
T_a > 0 °C
T_a ≤ 0 °C
Collector-base voltage
Emitter-base voltage
Collector current ¹⁾
Base current
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-soldering point ²⁾
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
T_j
T_op
T_stg
Values
4.0
3.7
13
1.2
50
3
175
-65...+175
-65...+175
R_{th JS}
325
Notes.:
1) For TA > 25°C the derating of IC has to be considered. Nomograms will be available on request.
2) TS is measured on the emittter lead at the soldering point to the pcb.
IFAG IMM RPD D HIR
1 of 3
Unit
V
V
V
V
mA
mA
C
C
C
K/W
V1, June 2010