BFY450_11 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor
4
 HiRel Discrete and Microwave Semiconductor
 For Medium Power Amplifiers
 Compression Point P-1dB =19dBm 1.8 GHz
Max. Available Gain Gma = 16dB at 1.8 GHz
 Hermetically sealed microwave package
1
 Transition Frequency f_T = 20 GHz
 SIEGET^25-Line
Infineon Technologies Grounded Emitter Transistor-
25 GHz fT-Line

Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 03
BFY450
3
2
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BFY450 (ql)
Marking Ordering Code
-
see below
Pin Configuration
1 23 4
CEBE
Package
Micro-X
(ql) Quality Level:
P: Professional Quality
H: High Rel Quality
S: Space Quality
ES: ESA Space Quality
(see order instructions for ordering example)
IFAG IMM RPD D HIR
1 of 4
V2, February 2011