BFS483_13 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Qualification report according to AEC-Q101 available

Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
• f_T = 8 GHz, NF_min = 0.9 dB at 900 MHz
• Two (galvanic) internal isolated Transistor in
one package
• For orientation in reel see package
information below
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
BFS483
4
5
6
3
2
1
C1
E2
B2
6
5
4
TR2
TR1
1
2
3
B1
E1
C2
EHA07196
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS483
Marking
Pin Configuration
Package
RHs _{1=B 2=E 3=C 4=B 5=E 6=C SOT363}
1
2013-07-25