BFS460L6 Datasheet, PDF (1/3 Pages) Infineon Technologies AG – NPN Silicon RF TWIN Transistor

NPN Silicon RF TWIN Transistor
• High f_T of 22 GHz
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• World's smallest SMD 6-pin leadless package
• Excellent ESD performance
• Built in 2 transistors (TR1, TR2: die as BFR460L3)
* Short-term description
6 TR1
5
4
TR 2
4
5
6
BFS460L6
3
2
1
1
2
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFS460L6
Marking
Pin Configuration
Package
AB
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
T_A > 0 °C
T_A ≤ 0 °C
V_CEO
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 104°C
Junction temperature
Ambient temperature
Storage temperature
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
1_{TS is measured on the collector lead at the soldering point to the pcb}
Value
Unit
V
4.5
4.2
15
15
1.5
50
mA
5
200
mW
150
°C
-65 ... 150
-65 ... 150
1
Jun-15-2004