BFS17W Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN 1 GHz wideband transistor

NPN Silicon RF Transistor

For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
BFS17W
3
2
1
VSO05561
Type
BFS17W
Marking
MCs
1=B
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f = 10 MHz
Total power dissipation
T_S
93 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point²⁾
Pin Configuration
2=E
3=C
Package
SOT323
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
P_tot
T_j
T_A
T_stg
R_thJS
Value
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150

205
Unit
V
mA
mW
°C
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Jul-13-2001