BFS17S_11 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
• BFS17S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
BFS17S
4
5
6
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS17S
Marking
Pin Configuration
Package
MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f = 10 MHz
Total power dissipation¹⁾
T_S ≤ 93 °C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CBO
V_EBO
I_C
I_CM
P_tot
T_J
T_A
T_Stg
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point²⁾
R_thJS
≤ 240
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)}
Unit
V
mA
mW
°C
Unit
K/W
1
2011-07-20