BFS17S Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor

For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
BFS17S
4
5
6
C1
E2
B2
6
5
4
3
2
1
VPS05604
TR2
TR1
Type
BFS17S
Marking
MCs
1
2
3
B1
E1
C2
EHA07196
Pin Configuration
Package
1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 _SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f = 10 MHz
Total power dissipation
T_S
93 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ²⁾
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
P_tot
T_j
T_A
T_stg
R_thJS
Value
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150

240
Unit
V
mA
mW
°C
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Aug-20-2001