BFS17P_07 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BFS17P
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS17P
Marking
Pin Configuration
MCs
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation²⁾
T_S ≤ 55 °C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CBO
V_EBO
I_C
I_CM
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point³⁾
R_thJS
1_{Pb-containing package may be available upon special request}
2_{TS is measured on the collector lead at the soldering point to the pcb}
3_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150
Value
≤ 340
Unit
V
mA
mW
°C
Unit
K/W
1
2007-03-30