BFR740L3RH Datasheet, PDF (1/11 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor
• High gain ultra low noise RF transistor
• Extremly small and flat leadless package,
height 0.32 mm, ideal for modules
• Provides outstanding performance for
wireless applications up to 10 GHz
• Ideal for WLAN applications,
including routers and access points
• Based on Infineon's reliable high volume
SiGe:C technology
• Outstanding noise figure NF_min 0.5 dB at 1.8 GHz
Outstanding noise figure NF_min 0.8 dB at 6 GHz
• Accurate SPICE GP model enables effective
design in process
• High maximum stable and available gain
Gms = 24.5 dB at 1.8 GHz, Gma = 15 dB at 6 GHz
• Pb-free (RoHS compliant) package
BFR740L3RH
3
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR740L3RH
Marking
Pin Configuration
R9
1=B
2=C
3=E
Package
TSLP-3-9
1
2010-09-08